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Preliminary
03.02.03
Features
F0100613B
* * * * * * Low voltage of +5.0V single power supply 1.5k high transimpedance Typical 7.5GHz broad bandwidth 29dB high gain Over 20dB wide dynamic range Differential output 10Gb/s Receiver Transimpedance Amplifier
Applications
*
Preamplifier of an optical receiver circuit for OC-192/STM-64(10Gb/s)
Functional Description
The F0100613B is a stable GaAs integrated transimpedance amplifier capable of 29dB gain at a typical 7.5GHz 3dB-cutoff-frequency, making it ideally suited for a 10Gb/s optical receiver circuit, for example, OC-192/STM-64, instrumentation, and measurement applications. The integrated feedback loop design provides broad bandwidth and stable operation. The F0100613B typically specifies a high transimpedance of 1.5k (RL=50) with a wide dynamic range of over 20dB. Furthermore, it can operate with a supply voltage of single +5.0V. Only chip-shipment is available for all product lineups of GaAs transimpedance amplifiers, because the packaged preamplifier cannot operate with the maximum performance owing to parasitic capacitance of the package. The F0100613B and F0100614B are various in pad assignment.
F0100613B
10Gb/s Transimpedance Amplifier
Absolute Maximum Ratings
Ta=25C, unless specified
Parameter Supply Voltage Supply Current Ambient Operating Temperature Storage Temperature Symbol VDD IDD Ta Tstg Value -0.5 to +7.0V 100 -40 to +90 -55 to +125 Units V mA C C
Recommended Operating Conditions
Ta=25C, VDD=+5.0V unless specified
Parameter Supply Voltage Ambient Operating Temperature Photodiode Capacitance Input bond wire inductance Symbol MIN. VDD Ta CPD LIN 4.75 0 0.20 0.2 Value TYP. 5.00 25 0.225 0.4 MAX. 5.25 85 0.25 0.6 V C pF nH Unit
Electrical Characteristics
Ta=25C, VDD=+5.0V unless specified
Parameters Supply Current Gain -3dB High Frequency Cut-off Input Impedance Transimpedance Output Voltage Input Voltage -3dB Low Frequency Cut-off Symbol IDD S21 FCh RI ZT VO VI FCl Test Conditions MIN. DC PIN=-30dBm f=1GHz, RL=50 PIN=-30dBm RL=50 f =1GHz f =1GHz DC DC Cout=1000pF Value TYP. 65 29 7.5 55 1.5 3.4 1.0 60 MAX mA dB GHz k V V kHz Units
F0100613B
10Gb/s Transimpedance Amplifier
Block Diagram
VDD
OUTP Level Shift IN Buffer OUTN
GND CAP Cout
Die Pad Description
VDD GND IN OUTP OUTN CAP
Supply Voltage Ground Input Output (positive) Output (negative) Connect outer Capacitance
F0100613B
10Gb/s Transimpedance Amplifier
Die Pad Assignment
A 11 10 9
12
8
13
7
920um
6 1 2 O 3 4 5
1050um
No. 1 2 3 4 5 6 7 8 9
Symbol GND VDD VDD OUTN GND OUTN GND OUTP GND
Center Coordinates (um) (70,177.5) (220,70) (430,70) (685,70) (910,92.5) (910,265) (910,425) (910,585) (910,757.5)
No. 10 11 12 13
Symbol OUTP CAP GND IN
Center Coordinates (um) (685,780) (70,780) (70,602.5) (70,425)
O A
(0,0) (980,850)
F0100613B
10Gb/s Transimpedance Amplifier
Test Circuits
1) AC Characteristics
50
Network Analyzer VDD
50
Pin=-20dBm f=130MHz20GHz IN
OUTP DUT OUTN
50
Prober
2) Sensitivity Characteristics
VPD
5V 0.022uF
E/O Converter
Optical Attenuator PD DUT
VDD
5V 0.022uF
Pulse Pattern Generator
CLK
0.022uF
Post Amp.
Bit Error Rate Tester
F0100613B
10Gb/s Transimpedance Amplifier
General Description
A transimpedance amplifier is applied as a pre-amplifier which is an amplifier for a faint photo-current from a PIN photo diode (PD). The performance in terms of sensitivity, bandwidth, and so on, obtained by this transimpedance amplifier strongly depend on the capacitance brought at the input terminal; therefore, "typical", "minimum", or "maximum" parameter descriptions can not always be achieved according to the employed PD and package, the assembling design, and other technical experts. This is the major reason that there is no product lineup of packaged transimpedance amplifiers. Thus, for optimum performance of the transimpedance amplifier, it is essential for customers to design the input capacitance carefully. Hardness to electro-magnetic interference and fluctuation of a power supply voltage is also an important point of the design, because very faint photo-current flows into the transimpedance amplifier. Therefore, in the assembly design of the interconnection between a PD and a transimpedance, noise should be taken into consideration.
Recommendation
Noise Performance
The F0100613B based on GaAs FET's shows excellent low-noise characteristics compared with IC's based on the silicon bipolar process. Many transmission systems often demand superior signal-to-noise ratio, that is, high sensitivity; F0100613B is the best choice for such applications. The differential circuit configuration in the output enable a complete differential operation to reduce common mode noise: simple single ended output operation is also available.
F0100613B
10Gb/s Transimpedance Amplifier
Die-Chip Description
The F0100613B is shipped like the die-chip described above. The die thickness is typically
280um 20um with the available pad size uncovered by a passivation film of 75um square.The material of the pads is TiW/Pt/Au and the backside is metalized by Ti/Au.
Assembling Condition
SEI recommends the assembling process as shown below and affirms sufficient wire-pull and die-share strength. The heating time of one minute at the temperature of 310C gave satisfactory results for die-bonding with AuSn performs. The heating and ultrasonic wire-bonding at the temperature of 150C by a ball-bonding machine is effective.
Quality Assurance
For the F01 series products, there is only one technically inevitable drawback in terms of quality assurance which is to be impossible of the burn-in test for screening owning to die-shipment. SEI will not ship them if customers do not agree on this point. On the other hand, the lot assurance test is performed completely without any problems according to SEI's authorized rules. A microscope inspection is conducted in conformance with the MIL-STD-883C Method 2010.7.
Precautions
Owing to their small dimensions, the GaAs FET's from which the F0100613B is designed are easily damaged or destroyed if subjected to large transient voltages. Such transients can be generated by power supplies when switched on if not properly decoupled. It is also possible to induce spikes from static-electricity-charged operations or ungrounded equipment.

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